v rrm v v rms v v dc v i f(av) a trr ns r jc t j t stg unit parameter symbol 280 350 420 200 300 400 500 600 note 1: pulse test with pw=300 s, 1% duty cycle note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 200 300 400 typical thermal resistance 6.0 operating junction temperature range storage temperature range - 55 to +175 - 55 to +150 - 55 to +175 - 55 to +150 a 100 maximum reverse current @ rated vr t j =25 t j =125 i r 10 maximum reverse recovery time (note 2) 20 25 v maximum instantaneous forward voltage (note 2) i f = 5 a v f peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 70 a 0.95 1.25 1.70 maximum dc blocking voltage maximum average forward rectified current 10 maximum repetitive peak reverse voltage maximum rms voltage 500 600 140 210 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. features low forward voltage drop high current capability case: fully insulated to-220fp fullpak plastic high surge current capability weight: 2.0 gram approximately polarity: as marked on diode body method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current epoxy: ul 94v-0 rate flame retardant ito-220ab unit:mm ? UGF1004GS thru ugf1008gs pb free plating product UGF1004GS thru ugf1008gs application automotive inverters and solar inverters plating power supply,smps and ups car audio amplifiers and sound device systems pb 10 ampere insulated series connection ultra fast recovery half bridge rectifiers positive negative common cathode case case case common anode suffix "g" case series connection tandem polarity suffix "ga" suffix "gs" latest gpp technology with ultra fast recovery time doubler tandem polarity suffix "gd" ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/2 rev.05 o c /w o c o c UGF1004GS ugf1005gs ugf1006gs ugf1007gs ugf1008gs
(ta=25 unless otherwise noted) ratings and characteristics curves 0 2 4 6 8 10 12 0 255075100125150175 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductive load with heatsink ugf1007gs-ugf1008gs UGF1004GS-ugf1006gs 0 20 40 60 80 100 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj = 25 tj=125 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics tj=25 tj=125 UGF1004GS ugf1007gs-ugf1008gs 10 100 1000 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/2 rev.05 ugf1005gs-ugf1006gs ? UGF1004GS thru ugf1008gs
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